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发明名称
PROCESS OF FABRICATING SELECTIVE TUNGSTEN NITRIDE THIN FILM AND CAPACITOR USING IT
摘要
申请公布号
KR0165356(B1)
申请公布日期
1998.12.15
申请号
KR19950049709
申请日期
1995.12.14
申请人
SAMSUNG ELECTRONICS CO.,LTD
发明人
KIM, HYUNG-SUB;PARK, BYUNG-RUUL
分类号
H01L27/10;(IPC1-7):H01L27/10
主分类号
H01L27/10
代理机构
代理人
主权项
地址
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