| 摘要 |
A phase shift mask capable of improving the profile of a photoresist film pattern to be formed, thereby achieving an easy formation of micro patterns to fabricate highly-integrated semiconductor devices, and a method for forming the phase shift mask. The phase shift mask includes a transparent substrate, a light shield film pattern formed on the transparent substrate, the light shield film pattern having alternately-arranged lines and spaces respectively having desired dimensions, a first phase shift film pattern formed on the light shield film pattern and provided with alternately-arranged lines and spaces, the first phase shift film pattern having a larger line width than that of the light shield film pattern, and a second phase shift film pattern formed on a portion of the transparent substrate occupied by the spaces of the first phase shift film pattern.
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