| 摘要 |
PROBLEM TO BE SOLVED: To obtain a sintered compact having respectively specified maximum diameter and distribution of voids, to minimize the occurrence of nodules on a target to obviate the necessity of a leaning stage and improve productivity, to minimize the occurrence of abnormal electric discharge to improve the quality of a thin ITO film, by performing sputtering by the use of a target of ITO sintered compact in which relative density is regulated to a specific value or above. SOLUTION: The relative destiny of a sintered compact of ITO (Indium Tin Oxide) is regulated to >=99%, and also the maximum diameter of voids existing in the sintered compact is regulated to <=10 μm. Further, the number of voids of 1 to 10 μm maximum diameter is reglated to <=1000 pieces/mm<2> . A precipitate prepared by means of coprecipitation is burned to form a powder, and the ITO sputtering target is produced by sintering the powder. The burning of the precipitate is carried out under the atmosphere containing hydrogen halide gas or halogen gas. Moreover, the area of the ITO sputtering target is >=100 cm<2> , and the content of tin oxide is 1 to 50 wt.%. |
