发明名称 Methods and apparatus for etching a conductive layer to improve yield
摘要 A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the conductive feature. The method further includes thereafter etching at least partially through a remaining thickness of the conductive layer using a second etch recipe different from the first etch recipe to form a bottom portion of the conductive feature. The bottom portion is disposed below the top portion. The second etch recipe is configured to yield a sloped etch foot in the bottom portion of the conductive feature.
申请公布号 US5849641(A) 申请公布日期 1998.12.15
申请号 US19970820533 申请日期 1997.03.19
申请人 LAM RESEARCH CORPORATION 发明人 ARNETT, DAVID R.;MUSSER, JEFFREY V.
分类号 H01L21/302;H01L21/3065;H01L21/3213;H01L21/768;(IPC1-7):H01L21/00 主分类号 H01L21/302
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