发明名称 |
Methods and apparatus for etching a conductive layer to improve yield |
摘要 |
A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the conductive feature. The method further includes thereafter etching at least partially through a remaining thickness of the conductive layer using a second etch recipe different from the first etch recipe to form a bottom portion of the conductive feature. The bottom portion is disposed below the top portion. The second etch recipe is configured to yield a sloped etch foot in the bottom portion of the conductive feature.
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申请公布号 |
US5849641(A) |
申请公布日期 |
1998.12.15 |
申请号 |
US19970820533 |
申请日期 |
1997.03.19 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
ARNETT, DAVID R.;MUSSER, JEFFREY V. |
分类号 |
H01L21/302;H01L21/3065;H01L21/3213;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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