INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME,申请号KR19940004600-传众专利搜索

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发明名称	INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要
申请公布号	KR0165909(B1)	申请公布日期	1998.12.15
申请号	KR19940004600	申请日期	1994.03.09
申请人	MITSUBISHI ELECTRONICS CO.,LTD	发明人	DOMOMATSU, YOSHIHUMI;YAMAGUCHI, HIROSHI;HAGINO, HIROYASU
分类号	H01L21/331;H01L29/06;H01L29/10;H01L29/739;(IPC1-7):H01L29/68	主分类号	H01L21/331
代理机构		代理人
主权项
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