发明名称 Apparatus and method for sputter depositing dielectric films on a substrate
摘要 Apparatus and method for sputter depositing a layer of material comprises a sputtering chamber having an internal conductive wall which provides an electrical reference for plasma during sputter deposition. A conductive shield positioned in the processing space of the chamber between the target and the substrate is configured for capturing sputtered material which would deposit on the chamber wall surface during sputter deposition. The conductive shield reduces the amount of sputtered material depositing on the chamber wall and maintains a surface portion of the wall as a generally stable electrical reference for the plasma and is further operable for passing plasma therethrough during deposition to contact the stable electrical reference.
申请公布号 AU7591898(A) 申请公布日期 1998.12.11
申请号 AU19980075918 申请日期 1998.05.21
申请人 TOKYO ELECTRON ARIZONA, INC. 发明人 ALEXANDER D LANTSMAN
分类号 C23C14/34;C23C14/56;H01J37/34 主分类号 C23C14/34
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