Kontaktlöcherstruktur für eine Halbleiter-Schaltung und Herstellungsverfahren

摘要

A method is provided for forming an integrated circuit contact structure. A conductive region (12) is formed on a semiconductor device (10). Thereafter an insulating layer (14,16,18) is formed over the conductive region (10). An opening (22) is then formed through the insulating region (14,16,18) to the conductive region (12). A thin barrier layer (26) is deposited over the integrated circuit contact structure. A portion of the thin barrier layer (26) is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall (28) remains. Finally, a conductive metal (30) layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer (30) is deposited.