Semiconductor thin film useful for TFT

摘要

A novel semiconductor thin film consists of contiguous (flat) rod-shaped crystals, in which (i) the surface alignment is the same as the (110) alignment and almost all the crystal lattices exhibit continuity at each crystal boundary; (ii) the surface alignment is roughly the same as the (110) alignment and almost all the detectable crystal lattice edges linearly and continuously intersect each grain boundary of different crystal grains; (iii) the (110) alignment ratio is 0.9 or more and almost all the crystal lattices exhibit continuity at all the crystal boundaries; or (iv) the (110) alignment ratio is 0.9 or more and almost all the detectable crystal lattice edges linearly and continuously intersect each grain boundary of different crystal grains. Also claimed are semiconductor devices with insulated gates, in which at least one channel-forming region is formed from the semiconductor thin film described above.