Light emitting semiconductor device especially LED

摘要

In a light emitting semiconductor device having a doped current spreading layer of high conductivity which is provided on an optically active zone-containing semiconductor layer stack and which has a surface contact, one or more insulating regions are located completely within the current spreading layer. Preferably, the or each insulating region consists of the same material as the current spreading layer but with opposite doping. Also claimed is production of a light emitting semiconductor device having a current spreading layer by depositing a first portion of the current spreading layer on the underlying semiconductor layers, depositing and structuring the insulating region(s) and depositing a second portion of the current spreading layer.