Schottky diode for integrated circuit

摘要

The Schottky diode is formed in a lightly doped trough (2) of a p-conducting semiconductor substrate (1). As a cathode contact a low ohmic n-conducting layer (12) is provided within the trough and a separate rectifying Schottky contact (5) as the anode (6). A closed p-conducting guard ring (7) is provided extending along the periphery of the Schottky contact. The Schottky contact (5) is formed as a ring around a pn-junction. The pn-junction can be located at the centre of the Schottky contact ring which can be narrow, approx. 1 to 5 fm, preferably 2 to 3 fm