发明名称 METHOD OF PRODUCING POLYCRYSTALLINE SILICON IN CLOSED CIRCUIT
摘要 FIELD: silicon production. SUBSTANCE: method includes hydrogen reduction of trichlorosilane, separating and purifying components of gas mixture (SiHCl<SB>3</SB>,SiCl<SB>4</SB>,H<SB>2</SB>,HCl) leaving reactor, reusing these components to prepare polycrystalline silicon and carrying out trichlorosilane synthesis. According to invention, gas mixture of trichlorosilane reduction products is cooled to temperature from 0 to 40 C, filtered to remove solid impurities, and condensed at liquid nitrogen temperature to separate recycled hydrogen. Hydrochloric acid is sublimed at 85 C and then evaporated. Chlorosilanes are separated, and trichlorosilane is directed into hydrogen reduction apparatus. Silicon tetrachloride together with hydrogen chloride are directed into trichlorosilane synthesis apparatus, where industrial-grade silicon is also used. EFFECT: enabled closed-circuit conditions and improved product quality.
申请公布号 RU2122971(C1) 申请公布日期 1998.12.10
申请号 RU19970120627 申请日期 1997.11.17
申请人 ZAKRYTOE AKTSIONERNOE OBSHCHESTVO "EHLLINA-NT" 发明人 PROKHOROV A.M.;PETROV G.N.;ZHIRKOV M.S.;FADEEV L.L.
分类号 C01B33/03;C01B33/107;(IPC1-7):C01B33/03 主分类号 C01B33/03
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