摘要 |
<p>A Czochralski process furnace component comprises a high purity semiconductor standard composite including a carbon fiber reinforced carbon matrix having a total level of metal impurity below about 10 ppm, preferably below about 5 ppm, and most preferably having a level of metal impurity below the detection limit of inductively coupled plasma spectroscopy for the metals Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, K, Mg, Mn, Mo, Na, Ni, P, Pb, Sr and Zn. A crucible susceptor (15) for a crystal growing process for pulling a crystal ingot (17) from a crystal material melt (16) in a crucible (14) comprises a high purity composite comprising a two-dimensional, continuously woven carbon fiber fabric reinforced carbon matrix; the high purity composite having a total level of metal impurity less than about 10 parts per million; the crucible susceptor (15) being a one piece ply lay-up structure of the high purity composite, having a side ring and a base, said side ring and said base having substantially the same thickness.</p> |