| 摘要 |
FIELD: integrated transducers. SUBSTANCE: manufacturing process for integrated transducer having micromechanical polycrystalline-silicon surface structure includes formation of connections between mentioned structure and circuit on single-crystalline silicon substrate by evaporating highly doped polycrystalline silicon layer, photolithography, and etching of structure on supporting layer, its thermal treatment at 1100-1200 C, formation of active circuit components, metallization, passivation, and removal of supporting layer. EFFECT: improved response to mechanical effects. 12 dwgu
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