| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a NAND-type semiconductor non-volatile memory device which is suitable for a single power supply operation with a low voltage, facilitates the layout of data latching circuits of respective bit lines and, further, performs a data programming operation with an excellent disturb strength. SOLUTION: A source line SSL12 is selected, both the potentials of the channel parts of NAND rows NA1a and NA1b are charged to a program forbidding potential by the source line SSL12, the potentials charged in the channel parts of the NAND rows are discharged into a bit line in accordance with the contents of the data to be programmed and a programming voltage is applied to a selected word line WL12 to perform page programming of memory transistors connected to the selected word line en bloc. Therefore, a charging capacity can be significantly reduced in comparison with a conventional method wherein the potentials of non-selected NAND row channel parts are charged to a program forbidding potential through a bit line, so that a memory device suitable for a low voltage operation can be obtained.</p> |
