POWER SCHOTTKY BARRIER DIODE

摘要

PROBLEM TO BE SOLVED: To provide a power Schottky barrier diode which obtains a pressure resistance as designed and enables reduction in forward voltage drop. SOLUTION: In this Schottky barrier diode, a guard ring of a P-type semiconductor layer 4 is formed at a part of one surface of an N-type semiconductor substrate 2. A silicon oxide film 6 is provided on an outer circumferential end of the guard ring, and a Schottky barrier metallic layer 10 is formed on the one surface. In this case, the Schottky barrier layer 10 is formed inside, in contact with the inner side of the silicon oxide film 6.