发明名称 RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a resist pattern forming method excellent in workability independently of the stickiness of a photosensitive resin compsn., giving a pattern excellent in resolution and free from a chip and excellent also in yield. SOLUTION: A photosensitive resin compsn. is applied on a substrate and a laminated film consisting of a hydrophobic thermoplastic resin layer and a water-soluble resin layer is pressed on the surface of the photosensitive resin compsn. so that the surface of the water-soluble resin layer comes in contact with the surface of the compsn. The thermoplastic resin layer is then peeled off, a pattern mask is brought into contact with the surface of the exposed water-soluble resin layer, and exposure and development are carried out.
申请公布号 JPH10319599(A) 申请公布日期 1998.12.04
申请号 JP19970140960 申请日期 1997.05.14
申请人 NIPPON SYNTHETIC CHEM IND CO LTD:THE 发明人 HIUGA ATSUYOSHI;ODA MICHIO
分类号 G03F7/11;G03F7/38;H05K3/06;H05K3/18;(IPC1-7):G03F7/11 主分类号 G03F7/11
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