Memory circuit with dynamic redundancy

摘要

The integrated memory circuit has a matrix of identical memory cells (2) which can be individually addressed in at least one direction. Each cell has a corresponding redundant element that can be addressed in the same direction. Each cell has associated a circuit (20) to reversibly inhibit its operation if it is faulty, and to allow the redundant cell to be activated to preserve the correct operation of the entire circuit. The memory addressing circuits can be reversibly modified to allow access to the replacement cell as if it were the memory cell it replaced.