| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of the dimensional change of a resist pattern and to shorten waiting time of an aligner until the succeeding wafer is exposed after test exposure by making the succeeding wafer to wait before a resist film is formed in the case of performing test exposure, development, and dimension measurement on the resist pattern. SOLUTION: When a coating/developing station 3 is in a test mode and a treatment starting switch is turned on at the wafer treatment, a series of wafer treatment is continuously performed on a wafer 4 to be test-exposed from the beginning to the end. When the wafer 4 reaches a resist coating step, the treatment starting switch is automatically turned off and the succeeding wafer 4 of the wafer 4 to be test-exposed is set to a waiting state before a resist coating is started. While the succeeding wafer 4 is in the waiting state, a resist pattern is obtained by performing exposure 11 and development. Thereafter, the width of the obtained resist pattern is measured with a dimension measuring instrument and the optimum exposure condition is decided, based on the measured results. |
