| 摘要 |
The invention concerns a device and a method for ion beam etching for producing an etched surface (2) on a semiconductor (1) or insulant. The device comprises a positive ion source (20), means for guiding (23) an ion beam (42), a system for detecting the spatial and temporal interaction of the ions and the etched surface, means for interrupting (24) the beam and means for displacing the etched surface relatively to the beam. A processing unit (29) is connected to the displacing means, to the detecting means and to the beam interrupting means and controls, preferably iteratively, successive operations detecting interaction of the ion beam and the etched surface, interrupting the beam, relative displacing of the etched surface with respect to the beam position and restoring the beam.
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