| 摘要 |
PROBLEM TO BE SOLVED: To improve the productivity of a semiconductor device by suppressing the occurrence of peeled foreign matters from the internal wall of an adhesion preventing jig provided in a film deposition device by simultaneously forming large irregularities having heights which fall within a specific range and small irregularities having specific heights on the internal surface of the adhesion preventing jig. SOLUTION: A semiconductor device is manufactured by forming a film while an aluminum adhesion preventing jig having both large irregularities having heights of several hundreds ofμm to several tens ofμm and small irregularities having heights of several tens ofμm to several hundreds of nm formed by forming a porous film having irregularities of micro order by performing anodic oxidation after the surface of the film adhering section is roughened by sandblasting, etc., on the surface of the film adhering section of the jig is installed. Specifically, after the recessing and projecting shape having the maximum height of several hundreds ofμm to several tens ofμm is formed by sandblasting the surface of an aluminum base material 11 by using alumina particles 12, etc., the small irregularities are formed by performing liquid horning by jetting a fine abrasive 18a and a liquid 18b upon the surface.
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