| 摘要 |
PROBLEM TO BE SOLVED: To simplify processes, to lower cost and to reduce impurity contamination or the like, even in the case of providing the semiconductor layer of a large film thickness on a support. SOLUTION: By the ion implantation of gaseous hydrogen to a base substrate (single-crystal silicon substrate) provided with an oxidized film on a surface, a defective layer for peeling is formed (P1) in the state of securing an extremely thin single-crystal thin-film layer at a surface layer part at a prescribed depth position (about 1μm from the surface). After the defective layer has been formed, the oxidized film is removed (P2). Then, by an epitaxial growth method at a low temperature, the epitaxial layer of a prescribed thickness (several tens ofμms) is formed (P3) on the single-crystal thin-film layer of the base substrate. Then, to the support (silicon substrate) provided with an insulation film, the base substrate is stuck (P4) at the epitaxial layer and consequently peeled (P5) at the defective layer. Thus, a semiconductor substrate provided with the semiconductor layer (epitaxial layer and thin-film layer) of the thick film is obtained via the insulation film on the support. Thereafter, high temperature annealing (P6) and the surface grinding (P7) of a peeling surface are performed.
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