| 摘要 |
<p>PROBLEM TO BE SOLVED: To prepare a polishing composition which has a high polishing rate and a high selection ratio and causes few surface defects by mixing an abrasive, such as silicon dioxide, alumina, cerium oxide, titanium oxide, silicon nitride, etc., water, and a basic organic compound together. SOLUTION: A polishing composition is prepared by mixing at least one kind of abrasive selected from among silicon dioxide, alumina, cerium oxide, titanium oxide, silicon nitride, zirconium oxide, and manganese dioxide, water, and a basic organic compound together. An ideal abrasive in the composition is silicon dioxide, but a more ideal abrasive is colloidal silica or fumed silica. An ideal content of the abrasive in the composition is 0.1-50 wt.%, but a more ideal content is 0.5-25 wt.%. An ideal basic organic compound is an amine compound or an ammonium compound and an ideal content of the compound is 0.001-35 wt.%.</p> |
