| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce an electric current during writing and to enable large scale parallel writing by making electron infusion to a floating gate by using Fouiler-Nordheium tunneling phenomenon between the floating gate and a control gate. SOLUTION: A first impurity diffused region 21, a second impurity diffused region 22 and a channel region 23 are formed on a memory cell substrate 20, and a floating gate 24 is formed on a region, including a boundary of the second impurity diffusing region 22 and the channel region 23. Additionally a control gate 25 is formed so as to rise up from the first impurity diffused region 21 side and electrons are injected from the control gate 25 into the floating gate 24 by using Fouiler-Nordheim tunneling phenomenon between the floating gate 24 and the control gate 25.</p> |
