| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve the improvement of the yield, etc., of an EEPROM (electrically erasable and programmable read-only memory) device whose programming time can be varied by the improvement of a resolution, etc. SOLUTION: An EEPROM device has memory cell arrays 6 and 7 comprising electrically programmable and erasable non-voltatile memory chips. Regions in which time data for the programming and the erasing are stored are provided in the memory cell arrays 6 and 7. The EEPROM device has a latching circuit which reads the data from the regions and stores them and a counter 3 which counts clock signals outputted from an oscillation circuit. The counter varies the time for the programming and the erasing in accordance with the data.</p> |
