| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM forming method which enables high productivity and high reliability. SOLUTION: A silicon nitride etch stopping layer 90 is bonded onto an entire structure of a device, including first and second source/drain regions 80 and 84 which have been exposed during a spacer etch process, followed by further bonding of a thick oxide layer 96 thereon. By performing chemicomechanical polishing, the surface of the thick oxide layer 96 is planarized. An opening is formed in the thick oxide layer 96 above the first source/drain region 84 so as to be stopped by the etch stopping layer 90. Thereafter, the etch stopping layer 90 within the opening of the thick oxide layer 96 is removed to form a capacitor electrode 98 therein, so as to be in contact with the exposed portion of the first source/drain region 84. Similarly, a bit line contact for the device may be formed. |
