| 摘要 |
PROBLEM TO BE SOLVED: To supply uniformly a current to a pn interface under a second electrode without enlarging element size, by a method wherein a first electrode provided on both sides of a light-emitting part opposite to each other is connected via a wiring layer provided on a face of a light-emitting element, and the second electrode is formed so as to coat the entire face of the light-emitting part. SOLUTION: An n-GaN layer 12 and a p-GaN layer are sequentially laminated on a sapphire substrate 11. Thereafter, a portion where a peripheral part and an n electrode of an element are formed by etching is removed up to a middle part of the n-GaN layer 12. At this time, in the portion which is not etched, a pn interface remains to form a light-emitting part. Next, a positive electrode 15 is formed on the p-GaN layer 13, and negative electrodes 14a, 14b and a wiring layer 16 are integrally formed on the n-GaN layer 12. Thus, the positive electrode 15 is formed so as to coat the substantially entire face, the negative electrodes 14a, 14b are disposed along two sides of a light-emitting part counter to each other, and a current injected into the light-emitting part can be made uniform. |
