| 摘要 |
PROBLEM TO BE SOLVED: To prevent the reduction of the life of a device caused by the generation of heat and make it possible to allow current to flow in the direction vertical to the surface of a water, by forming a gallium nitride chemical semiconductor layer on metal. SOLUTION: On a high melting point metal substrate 1 made of metal having a melting point of 1300 deg.C or above such as tungsten, platinum and chrome, polycrystalline or amorphous conductive AlGaN low temperature buffer layer 2 is formed by the metal organic vapor phase growth method. Then, an n-type GaN contact layer 3 is formed on the buffer layer 2. After that, an n-type AlGaN clad layer 4 is formed on the n-type contact layer 3, and an InGaN active layer 5 is formed on the n-type clad layer 4. Furthermore, a p-type AlGaN clad layer 6 is formed on the active layer 5, a p-type GaN contact layer 7 is formed on the p-type clad layer 6, and finally a p-type electrode 12 is formed on the p-type contact layer 7. |
