| 摘要 |
PROBLEM TO BE SOLVED: To etch a thick semiconductor layer by using a thin etching mask by using an easily-oxidizable metallic film for an etching film and performing the etching while an oxidizing source is supplied for oxidizing the metallic film. SOLUTION: After a Ti film 3 and a photoresist film 4 are successively formed on the surface of a semiconductor layer 2, the part corresponding to the prescribed etching area of the semiconductor layer 2 is opened by patterning (a). Then the prescribed etching part of the semiconductor layer 2 is exposed by etching the Ti film 3 by using the photoresist film 4 as a mask (b). Thereafter, the semiconductor layer 2 is etched by the CAIBE method by using the photoresist film 4 and Ti film 3 as masks while an oxygen gas is supplied. When the oxygen gas is supplied, the exposed surface of the Ti film 3 is oxidized to TiO2 by the oxygen and the Ti film 3 becomes to be hardly etched. Therefore, precise perpendicular etching can be performed easily by improving the patterning accuracy, because the etching mask can be formed in a very thin film. |
