| 摘要 |
PROBLEM TO BE SOLVED: To form a metal oxide film, having a high step coverage and a high dielectric rate by a chemical vapor-phase reaction method. SOLUTION: A substrate, having an Ru film 10 serving as a lower electrode of a capacitor, which is electrically connected to a transistor source/drain 3a formed on an interlayer insulating film 6b, is conveyed into a reaction chamber of an MO-CVD device. The temperature of the substrate is raised up to 600 deg.C and then stabilized. Ar is sprayed to the substrate, while maintaining Sr(DPM)2 , Ba(DPM)2 and TiO(DPM)2 at the temperature of 100-200 deg.C, respectively, to permit the respective materials to sublimate, followed by introduction into the reaction chamber. Simultaneously with the introduction of the material gases, O2 , serving as an oxidizing gas, is also introduced to maintain the pressure of the reaction chamber at 20 Torr. Thereafter, the substrate is rotated about its center as a rotational axis at 3000 rpm, for depositing a (Ba, Sr)TiO3 film 11 to a thickness of 20 nm. |
