| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ferroelectric film of a dense crystal structure, capable of forming a ferroelectric film of dense crystal structure on the surface of a lower electrode, even in a Bi-layered structure compound, in which coarsened crystal grains are easily generated by separating crystallization steps into a plurality of stages. SOLUTION: A Ti adhesive layer 3 and then a lower Pt electrode 4 are formed on a silicon substrate 1, having a silicon oxide film 2 formed by thermal oxidation. Next, on the lower Pt electrode 4, a layer of an MOD solution of SrBi2 Ta2 O9 is coated. After having been subjected to a dry step, the SrBi2 Ta2 O9 film is crystallized by a heat treatment at a substrate temperature of 600 deg.C under a reduced pressure and oxygen atmosphere. Thereafter, coating and drying steps are repeatedly conducted three times on the SrBi2 Ta2 O9 film 6 to provide the SrBi2 Ta2 O9 film 6 with a desired film thickness by the MOD method and to turn the film 6 into an amorphous or microcrystal state by heat treatment. After an upper Pt electrode 9 is formed on the SrBi2 Ta2 O9 film 7, the heat treatment is conducted at a substrate temperature of 600 deg.C under a reduced pressure and oxygen atmosphere. |
