发明名称 METHOD FOR GROWING NANOMETER-SCALE PARTICLE
摘要 PROBLEM TO BE SOLVED: To enable use as a quantum electrode device such as a single electron transistor. SOLUTION: Nanometer-scale particles 3 of Au, for example, are caused to adhere onto an SiO2 surface layer 1 having receptor sites 4 of a first electric polarity provided by processing with an APTMS solution. The Au particles 3 has a surface charge 5 of the opposite second polarity by surface-absorbed citrate ions, for example. As a result, those particles are attracted to the surface sites on a substrate. The Au particles caused to adhered are released from the substrate sites following that. Those particles move on the substrate and are united to be a low-dimensionally integrated construction. It is possible to produce this integrated construction in an irregular surface part on the surface of the substrate.
申请公布号 JPH10321834(A) 申请公布日期 1998.12.04
申请号 JP19980063461 申请日期 1998.03.13
申请人 HITACHI EUROP LTD 发明人 SATO TOSHIHIKO;AHMED HAROON
分类号 H01L29/06;B82B3/00;H01L21/208;H01L21/3205;H01L29/66;H01L29/80;H01L49/00;(IPC1-7):H01L29/66 主分类号 H01L29/06
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