| 摘要 |
PROBLEM TO BE SOLVED: To obtain a bonding wire for a multipin semiconductor device which hardly generates deformation and is excellent in conductivity, by a method wherein a specified amount of Al and a specified amount of Sb are contained or a specified sum amount of Al and Sb is contained, and the remainder is Au and inevitable impurities. SOLUTION: Al and Sb form the respective compounds with Rh, which have deposition reinforcement to Au. By depositing trace amounts of the compounds in Au, wire strength can be improve without decreasing conductivity so much. The concentration of Al and that of Sb are individually set to be 0.01-1%, and the concentration of Rh is set to be 0.05-5%. When the loadings are less than the above range, the amount of deposit is too small, and the effect of strength improvement is insufficient. On the contrary, when the loadings are large, workability is decreased, so that the working to a very thin wire becomes difficult and conductivity is deteriorated. |
