摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier and a radio communication equipment using it, in which high-frequency characteristic can be improved by using a multilayered substrate. SOLUTION: A circuit substrate is constituted of amplifier in two stage constitution. A third layer 15 of this circuit substrate is formed between a second layer 12 and a fourth layer 14 which is a GND layer, and the third layer 13 is provided with a signal transmission line 5a in an input-matching circuit 2a, voltage supply line 9a in a power supply voltage supplying circuit 4a of a pre-amplification transistor 1a, and voltage supply line 9b in a power supply voltage supplying circuit 4b of a post-amplification transistor 1b, and GND parts 31-34 among those lines, so that high-frequency isolation can be obtained between the signal transmission line and the voltage supply line of the amplification transistor, and between the voltage supply lines, oscillation can be prevented, and high-frequency characteristic can be improved. Also, the signal transmission line of the matching circuit can be constituted in an inner layer in a state such that the high-frequency isolation is obtained, so that the occupancy area of the high frequency amplifier can be miniaturized. Also, the connection of the GND parts is operated by via holes between the lines, so that further high-frequency isolation can be obtained so that the occupancy area can be miniaturized.</p> |