发明名称 ERASING OF FLASH MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To simplify the logic system of address signal by executing the erasing operation when a sector is latched and then executing the count-up when the erased sector is found larger than n-1 as a result of comparison to inspect the address latch of the next sector. SOLUTION: When the erasing operation is performed, an address signal coding method which is different from that used is employed. The address signal of 4 bits is counted, a sector is selected. When the address signal is counted up to 1111 from 0000, the dummy address signal is set to 0. When the address signal is counted gain to 0000 from 1111, the address is changed to 1. Even when counting is started to 0000 from 1111, the sector is sequentially selected to easily embody the logic.</p>
申请公布号 JPH10320982(A) 申请公布日期 1998.12.04
申请号 JP19980107885 申请日期 1998.04.17
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHOI KI-FUAN
分类号 G11C16/02;G11C16/06;G11C16/16;(IPC1-7):G11C16/02 主分类号 G11C16/02
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