| 摘要 |
PROBLEM TO BE SOLVED: To provide a high performance GaN series of light-emitting compound semiconductor device which has very few crystal defects and distortions, and facilitates the manufacturing method and has a good yield. SOLUTION: A cylindrical structure 12 with (10-10) m surface on principal surface of a substrate 11 as the side is formed perpendicular to the principal surface of the substrate 11, GaN series of nitride semiconductor laminations (InAlGaN series of a nitride compound semiconductor structure) 13, 14, 15 and 16 with at least one p-n junction are provided on a partial or overall side of the cylindrical structure 12, and electrodes 18 and 17 corresponding to p-type respectively for injecting current into the lamination structure 13, 14, 15 and 16 are formed. By injecting current into these electrode 18 and 17, light-emitting regions of the InAlGaN series of nitride compound semiconductor structures 13, 14, 15, 16 emits light, and the light is emitted in directions R1 and R2 which are perpendicular to the principal surface of the substrate 11. |
