| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a metallic layer on the surface of a substrate. SOLUTION: This method for forming a copper interconnection 54 starts from the stage of accumulating a barrier layer 48. An intermediate layer 50 is formed on the barrier layer 48 by exposing the barrier layer 48 to a plasma silane environment, the layer 50 is conductive at the time of being accumulated and contact point resistance is not affected. The layer 50 is coated with a copper seed layer 52 on the spot, the layer 52 is not formed inside a peripheral part exclusion region 20 and thus, a part 50a of the layer 50 is exposed. The part 50a is originally oxidized within a room environment and forms a barrier for obstructing the electric plating of copper, and thus the copper is not electrically plated inside the region 20. Thus, the area 50a prevents the jointing of the barrier and the copper, so as to avoid the peeling of the copper while protecting the peripheral part exclusion region which is desired for the electric plating of the copper. |
