MOSFET-Kanalstruktur und Verfahren zur Herstellung,申请号DE19916029453T-传众专利搜索

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发明名称	MOSFET-Kanalstruktur und Verfahren zur Herstellung
摘要
申请公布号	DE69129453(T2)	申请公布日期	1998.12.03
申请号	DE19916029453T	申请日期	1991.08.16
申请人	SHARP K.K., OSAKA, JP	发明人	ADAN, ALBERTO OSCAR, TENRI-SHI, NARA-KEN, JP
分类号	H01L21/265;H01L21/31;H01L21/336;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L29/10	主分类号	H01L21/265
代理机构		代理人
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