Maske für Belichtungsgerät zur verkleinernden Projektion

摘要

In a reticle, a small patten including a transparent portion and a large pattern including a light shielding portion are provided on a straight line in parallel to an x or y direction of the pattern forming area in the vicinities of crossing portions of opposite two sides of the pattern forming area with the straight line. A wafer is exposed with this reticle such that centers of the small pattern and the large pattern are overlapped. By measuring relative deviation of the center positions, the in-field error is calculated.