Halbleiterspeicher mit metallischer Verbindungsschicht vom selben Potential wie Wortleitung und verbunden mit dieser ausserhalb des Speichergebietes,申请号DE1990632419T-传众专利搜索

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发明名称	Halbleiterspeicher mit metallischer Verbindungsschicht vom selben Potential wie Wortleitung und verbunden mit dieser ausserhalb des Speichergebietes
摘要
申请公布号	DE69032419(T2)	申请公布日期	1998.12.03
申请号	DE1990632419T	申请日期	1990.09.13
申请人	KABUSHIKI KAISHA TOSHIBA, KAWASAKI-SHI, KANAGAWA-KEN, JP;TOSHIBA MICRO-ELECTRONICS CORP., KAWASAKI, JP	发明人	TAKASE, SHINSUKE, C/O INTELLECTUAL PROPERTYDIV., MINATO-KU, TOKYO 105, JP;HASHIMOTO, HISASHI, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP;TANAKA, YUTAKA, C/O INTELLECTUAL PROPERTY DIV., MINATO-KU, TOKYO 105, JP
分类号	G11C17/12;H01L21/82;H01L27/10;H01L27/112;H01L27/118;(IPC1-7):H01L27/118;G11C8/00;G11C5/06	主分类号	G11C17/12
代理机构		代理人
主权项
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