发明名称 Einkristall-Diamant und Verfahren zu seiner Herstellung
摘要 A single crystal diamond is produced by forming a less concentrated diamond region on a surface of a single crystal diamond substrate, epitaxially growing a single crystal diamond on the substrate by a vapor-phase growth method, and separating the epitaxially grown diamond from the diamond substrate. <IMAGE>
申请公布号 DE69411777(T2) 申请公布日期 1998.12.03
申请号 DE1994611777T 申请日期 1994.02.22
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP 发明人 TSUNO, TAKASHI, C/O ITAMI WORKS OF SUMITOM, ITAMI-SHI, HYOGO, JP;IMAI, TAKAHIRO, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO, JP;FUJIMORI, NAOJI, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO, JP
分类号 C30B25/02;C30B25/20;C30B29/04 主分类号 C30B25/02
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