| 摘要 |
A contact structure, on a lightly doped p-type region (20) which is positively biased in the conducting state of a semiconductor component, comprises a layer (23) of platinum silicide or a metal (preferably indium) silicide which produces, with the p-type silicon, a barrier height less than or equal to that of platinum silicide. Preferably, the p-type region (20) is the anode of a diode, the anode or trigger of a thyristor or the collector of a p-n-p type bipolar transistor. |
