| 摘要 |
PROBLEM TO BE SOLVED: To execute reactive ion etching without the occurrence of an etch stop in microprocessing by arranging parallel multiple wound high-frequency coils on the outer periphery of a cylindrical side wall consisting of a dielectric substance and converting gas mainly composed of gaseous halogen introduced from an upper part to plasma. SOLUTION: A cylindrical side wall 2 of a plasma generating section 1a of a vacuum chamber 1 is formed of a dielectric substance and a double wound high-frequency antenna 3 is arranged on the outer periphery thereof to convert the gas mainly composed of the gaseous halogen supplied from a gas introducing port 6 disposed at a top plate 5 is converted to the plasma. The etchant, such as positive ions, formed by this plasma is drawn out by a substrate electrode 7 which is arranged in a lower part and on which a high-frequency bias voltage is impressed and is bombarded to a substrate arranged thereon to effect reaction. The substrate is etched by prescribed patterns. As a result, the adhesion of deposits on the side wall 2 is suppressed and the pattern etching of submicron holes is made possible without the etch stop in microprocessing of <=0.3μm.
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