SEMICONDUCTOR DEVICE AND MULTILAYERED LEAD FRAME USED FOR THE SAME

摘要

The present invention has a structure of a semiconductor device in which the side of the metallic foil 12 for mounting a semiconductor element 2 opposite to the side where the semiconductor element is mounted is exposed to the one main surface A of the device. Such a structure permits low-profiling of the semiconductor device and solves the problem in resin injection in a packaging step of the semiconductor element thereby realizing mass-production of the semiconductor device. A multi-layer lead frame for use in the semiconductor device has a structure in which the metallic foil 12 for mounting the semiconductor device 2 and inner lead portion 11a are bonded to each other through the bonding material 3 having the base material 31 and the adhesive layers 32 and 33 on both sides thereof so that the respective upper surfaces C and D of the inner lead portion 11a and semiconductor element 2 are made flush with each other and hence a level difference is removed between the wire-bonding surfaces, thereby easing the low-profiling of the semiconductor device and realizing "dambarless". The present invention is efficient for particularly a low-profiled semiconductor device having a thickness of 1 mm or less.