发明名称 Overvoltage protection device for an integrated MOS power transistor
摘要 <p>The overvoltage protection circuit protects a vertically stacked power transistor (Tp). A first zener diode (Z1) is placed across the power transistor, and a second zener diode (Z2) is placed in parallel. The second zener diode has a higher avalanche voltage, and one side of the two transistors are connected together via a logic circuit (L). The logic circuit does not allow current to pass except when one of the inputs is high compared to the other input.</p>
申请公布号 EP0881682(A1) 申请公布日期 1998.12.02
申请号 EP19980410057 申请日期 1998.05.22
申请人 STMICROELECTRONICS S.A. 发明人 BARRET, JEAN
分类号 H01L27/07;H01L27/04;H01L21/822;H01L21/8234;H01L27/02;H01L27/088;H01L29/78;H02H9/04;(IPC1-7):H01L27/02 主分类号 H01L27/07
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