发明名称 A BiCMOS Logic Gate
摘要 <p>In order to provide a high speed, stable and low voltage logic gate of high applicability by a low-cost BiCMOS process, a BiCMOS logic gate of the invention comprises a pair of MOS transistors (6, 7) with gates supplied with input complementary logic signals and sources coupled and supplied with a constant current from a bipolar transistor (5) controlled by a reference voltage (VCS).</p><p>Voltage swings of the output complementary logic signals are determined by the reference voltage (VCS) and resistance ratio of drain resistor (3, 4) to emitter resistor (8), independent of power supply fluctuation or temparature change.</p>
申请公布号 EP0881771(A1) 申请公布日期 1998.12.02
申请号 EP19980111474 申请日期 1996.03.06
申请人 NEC CORPORATION 发明人 OKAMURA, HITOSHI
分类号 H01L27/06;H01L21/8249;H03K3/021;H03K3/356;H03K19/003;H03K19/08;H03K19/0944;H03K19/0948;(IPC1-7):H03K19/08 主分类号 H01L27/06
代理机构 代理人
主权项
地址