| 摘要 |
<p>PROBLEM TO BE SOLVED: To sufficiently prevent the occurrence of joint leakage, etc., at the time of forming highly integrated semiconductor element electrodes and contact parts, and also to reduce the resistance of the wiring. SOLUTION: By using this sputtering target, a Ti film can be formed to 0.2μm film thickness on a polycrystalline Si substrate at 2μm/hr film forming rate by DC magnetron sputtering after the inside of film forming equipment is evacuated to 1×10<-5> Torr and then Ar gas is introduced to 5×10 Torr. Further, the specific resistivity of this Ti film is <=105μΩ.cm, where the specific resistivity is given by multiplying film resistance by film thickness and the film resistance is measured by the four probe method. The resultant wiring film, obtained by using this sputtering target, is composed, e.g. of a Ti metal film or, a Ti compound film.</p> |
