Methods of fabricating ferroelectric capacitors

摘要

Methods of producing ferroelectric capacitors where the electrodes are formed in a contact hole. These methods include the steps of forming an insulating layer on an integrated circuit substrate. A contact hole is then formed through the insulating layer layer to expose a region of the integrated circuit substrate and to define a storage node pattern. A layer of oxidation-resistant conductive material is formed in the contact hole and the insulating layer removed to define a first storage electrode by exposing the layer of oxidation-resistant conductive material. A ferroelectric layer is then formed on the first storage electrode and a second storage electrode is formed on the ferroelectric layer opposite the first storage electrode.