发明名称 |
Level converting circuit for converting level of an input signal, internal potential generating circuit for generating internal potential, internal potential generating unit generating internal potential, highly reliable semiconductor device and method of manufacturing transistor having high breakdown voltage |
摘要 |
The level converting circuit includes a first current cutting circuit, a second current cutting circuit, a level shift circuit and an inverter. The first current cutting circuit includes two PMOS transistors connected to a node having a boosted potential Vpp. The second current cutting circuit includes two NMOS transistor connected to a ground node. The level shift circuits include two PMOS transistors and two NMOS transistors. Before a through current flows between the node having the boosted potential Vpp and the ground node, any of the transistor included in the first current cutting circuit and any of the transistors included in the second current cutting circuits are turned off. Therefore, through current between the node having the boosted potential Vbb and the ground node can be prevented.
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申请公布号 |
US5844767(A) |
申请公布日期 |
1998.12.01 |
申请号 |
US19960675760 |
申请日期 |
1996.07.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOMIYA, YUICHIRO;OOISHI, TSUKASA;HIDAKA, HIDETO;ASAKURA, MIKIO |
分类号 |
H01L29/40;G11C5/14;G11C7/10;G11C11/407;G11C11/408;H01L21/822;H01L21/8238;H01L27/04;H01L27/092;H03K19/003;H03K19/0175;H03K19/0944;(IPC1-7):G11C13/00 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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