In a method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell, the electrical connection is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.
申请公布号
US5844266(A)
申请公布日期
1998.12.01
申请号
US19970879871
申请日期
1997.06.20
申请人
SIEMENS AKTIENGESELLSCHAFT
发明人
STENGL, REINHARD;HAMMERL, ERWIN;HO, HERBERT L.;MANDELMAN, JACK A.;SRINIVASAN, RADHIKA;SHORT, ALVIN P.