ELECTRIC CELL FOR SEMICONDUCTOR MEMORY

摘要

An integrated circuit fuse circuit includes a plurality of fuses each connected to an output terminal, and a plurality of fuse programming circuits, a respective one of which is connected between a respective fuse and a reference voltage. Each of the fuse programming circuits includes a pair of complementary bipolar transistors and a field effect transistor. The pair of complementary bipolar transistors produce a large current through the associated fuse in response to a fuse programming signal which is applied to the field effect transistor. The fuse programming circuit may be fabricated in an integrated circuit by providing first and second spaced apart regions of second conductivity type in a well of first conductivity type, and a third region of the first conductivity type in the first region. An insulated gate is provided on the face between the first and second spaced apart regions. An insulated fuse is also provided on the face, electrically connected to the third region.